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Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces.

J Z Zhao1,2, W Fan3, M J Verstraete4

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Physical Review Letters
|September 24, 2016
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Summary
This summary is machine-generated.

Researchers propose a new Peierls-type system on wurtzite semiconductor surfaces. This system forms one-atom-wide metallic rows that transition to an insulating state below a critical temperature.

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Area of Science:

  • Surface science
  • Condensed matter physics
  • Materials science

Background:

  • Peierls-type 1D systems are typically found on metallic overlayers on semiconducting substrates.
  • Existing systems often form at step edges, limiting their applicability.

Purpose of the Study:

  • To propose a novel class of Peierls system on the (101[over ¯]0) surface of metal-anion wurtzite semiconductors.
  • To explore the formation of one-atom-wide metallic structures on these surfaces.

Main Methods:

  • First-principles calculations were employed to investigate the electronic and structural properties.
  • The concept of surface scaffolding was introduced to model atomic displacements.

Main Results:

  • Rows of threefold coordinated metal atoms were identified as one-atom-wide metallic structures.
  • The surface exhibits metallic behavior and undergoes a phase transition to a semiconducting state below a critical temperature.
  • Surface scaffolding was shown to mirror Peierls's description of atomic displacements.

Conclusions:

  • A new class of Peierls system is proposed for wurtzite semiconductor surfaces.
  • Partially hydrogenated (101[over ¯]0) surfaces of wurtzite compounds are predicted to exhibit this insulating state.