Related Experiment Video
Updated: Mar 14, 2026

Compact Quantum Dots for Single-molecule Imaging
Published on: October 9, 2012
Atomistic Design of CdSe/CdS Core-Shell Quantum Dots with Suppressed Auger Recombination
Ankit Jain1, Oleksandr Voznyy1, Sjoerd Hoogland1
1Department of Electrical and Computer Engineering, University of Toronto , 10 King's College Road, Toronto, Ontario M5S 3G4, Canada.
Abstract:
We design quasi-type-II CdSe/CdS core-shell colloidal quantum dots (CQDs) exhibiting a suppressed Auger recombination rate. We do so using fully atomistic tight-binding wave functions and microscopic Coulomb interactions. The recombination rate as a function of the core and shell size and shape is tested against experiments. Because of a higher density of deep hole states and stronger hole confinement, Auger recombination is found to be up to six times faster for positive trions compared to negative ones in 4 nm core/10 nm shell CQDs. Soft-confinement at the interface results in weak suppression of Auger recombination compared to same-bandgap sharp-interface CQDs. We find that the suppression is due to increased volume of the core resulting in delocalization of the wave functions, rather than due to soft-confinement itself. We show that our results are consistent with previous effective mass models with the same system parameters. Increasing the dot volume remains the most efficient way to suppress Auger recombination. We predict that a 4-fold suppression of Auger recombination can be achieved in 10 nm CQDs by increasing the core volume by using rodlike cores embedded in thick shells.
More Related Videos
Related Concept Videos
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Valence Bond Theory
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
π Electron Effects on Chemical Shift: Overview
Electron Configuration of Multielectron Atoms
Thermal and Photochemical Electrocyclic Reactions: Overview

