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Engineering and Localization of Quantum Emitters in Large Hexagonal Boron Nitride Layers
Sumin Choi1, Toan Trong Tran1, Christopher Elbadawi1
1School of Mathematical and Physical Sciences, University of Technology Sydney , Ultimo NSW 2007, Australia.
ACS Applied Materials & Interfaces
|October 13, 2016
Summary
Quantum emitters form in hexagonal boron nitride flakes, localizing at edges. Methods like irradiation and annealing activate these emitters, crucial for future nanophotonics applications.
Area of Science:
- Materials Science
- Quantum Optics
- Condensed Matter Physics
Background:
- Hexagonal boron nitride (hBN) is a wide-band-gap van der Waals material.
- hBN is a promising platform for quantum photonics and nanophotonics.
Purpose of the Study:
- To investigate the formation and localization of narrowband quantum emitters in large hexagonal boron nitride flakes.
- To understand the conditions and methods for activating these emitters.
Main Methods:
- Electron irradiation and high-temperature annealing of as-grown hBN flakes.
- Ion implantation and focused laser irradiation to enhance emitter formation.
- Microscopy and spectroscopy to study emitter localization.
Main Results:
- Narrowband quantum emitters were successfully formed and localized in large hBN flakes.
- Emitters can be activated using electron irradiation, annealing, ion implantation, or laser irradiation.
- Crucially, emitters were consistently observed to localize at the edges of the hBN flakes.
Conclusions:
- The formation and edge-localization of quantum emitters in hBN are demonstrated.
- These findings are a significant step towards utilizing hBN in nanophotonics and quantum technologies.
