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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Materials characterisation by angle-resolved scanning transmission electron microscopy.

Knut Müller-Caspary1, Oliver Oppermann1, Tim Grieb1

  • 1Institut für Festkörperphysik, Universität Bremen, Otto-Hahn-Allee 1, 28359, Bremen, Germany.

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|November 17, 2016
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Summary
This summary is machine-generated.

This study introduces angle-resolved scanning transmission electron microscopy (STEM) to analyze semiconductor nanostructures. The technique independently measures nitrogen content, thickness, strain, and composition with atomic resolution.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Electron scattering in solids reveals properties like strain and composition.
  • Scanning transmission electron microscopy (STEM) offers atomic resolution but lacks angular resolution.

Purpose of the Study:

  • To develop and apply angle-resolved STEM for enhanced analysis of semiconductor nanostructures.
  • To independently measure material properties like nitrogen content, thickness, strain, and composition at the atomic level.

Main Methods:

  • Implemented a novel setup to exploit the angular dependence of scattered electron intensity in STEM.
  • Applied angle-resolved STEM to analyze Gallium Nitride Arsenide (GaNxAs1-x) layers and Silicon-based Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) with Germanium Silicon (GexSi1-x) stressors.

Main Results:

  • Successfully measured nitrogen content and specimen thickness independently in GaNxAs1-x.
  • Demonstrated contrast formation due to strain and composition in Si-based MOSFETs with GexSi1-x stressors.
  • Compared experimental data with Rutherford and multislice simulations, identifying limitations of current theoretical models, especially at lower angles.

Conclusions:

  • Angle-resolved STEM provides a powerful tool for atomic-resolution characterization of semiconductor nanostructures.
  • Current theoretical models, including multislice simulations, have limitations in accurately describing electron scattering at lower angles, potentially due to inelastic scattering effects.