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Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
Published on: April 4, 2017
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Spin-photon entanglement interfaces in silicon carbide defect centers.
Sophia E Economou1, Pratibha Dev
1Department of Physics, Virginia Tech, Blacksburg, VA 24061, USA.
Nanotechnology
|November 19, 2016
Summary
Researchers developed methods for spin-photon entanglement in silicon carbide defects. These defects are promising for quantum communication and computing applications due to their emission near telecommunication wavelengths.
Area of Science:
- Quantum Information Science
- Solid-State Physics
- Materials Science
Background:
- Optically active spins in solids enable spin-photon entanglement for quantum technologies.
- Silicon carbide (SiC) defects are attractive for quantum applications due to emission near telecommunication wavelengths, crucial for long-range communication.
Purpose of the Study:
- To develop explicit schemes for generating spin-photon entanglement in specific SiC defects.
- To explore methods for creating both single-photon entanglement and long strings of entangled photons (cluster states).
Main Methods:
- Investigated spin-photon entanglement schemes in silicon monovacancy, silicon divacancy, and NV centers in SiC.
- Developed distinct approaches for single-photon entanglement and cluster state generation.
Main Results:
- Demonstrated explicit schemes for spin-photon entanglement in various SiC defects.
- Provided pathways for generating single-photon entanglement and cluster states in SiC.
Conclusions:
- SiC defects are viable platforms for robust spin-photon entanglement.
- The developed schemes pave the way for advanced quantum communication and measurement-based quantum computing using SiC.
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