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Room temperature nanostructured graphene transistor with high on/off ratio
Mircea Dragoman1, Adrian Dinescu1, Daniela Dragoman2,3
1National Institute for Research and Development in Microtechnology (IMT), PO Box 38-160, 023573 Bucharest, Romania.
Nanotechnology
|November 29, 2016
Summary
We fabricated graphene field-effect-transistors (GFETs) using nanoperforated graphene channels. These GFETs show excellent performance and significantly enhanced photoresponses, outperforming other room-temperature graphene detectors.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Graphene field-effect transistors (GFETs) are promising electronic components.
- Developing high-performance and sensitive graphene-based photodetectors is an active research area.
- Nanostructuring graphene offers a route to enhance its electronic and optoelectronic properties.
Purpose of the Study:
- To report the batch fabrication of GFETs utilizing nanoperforated graphene.
- To characterize the electrical and photoresponse properties of these novel GFETs.
- To compare their performance against existing room-temperature graphene detectors.
Main Methods:
- Batch fabrication of GFETs with nanoperforated graphene channels.
- Encapsulation of the fabricated transistors.
- Electrical characterization including on/off ratios and saturation regions.
- Measurement of photoresponse under room temperature conditions.
Main Results:
- Successfully fabricated encapsulated GFETs with tunable saturation regions via gate voltage.
- Achieved on/off ratios of at least 2 × 10^3 at room temperature.
- Demonstrated orders of magnitude higher photoresponses compared to non-heterostructure room-temperature graphene detectors.
Conclusions:
- Nanoperforated graphene is a viable material for fabricating high-performance GFETs.
- The developed GFETs exhibit excellent electrical characteristics and superior photoresponse.
- This work presents a significant advancement in room-temperature graphene photodetector technology.
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