Related Experiment Video
Updated: Mar 10, 2026

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
Published on: June 9, 2023
Oxygen vacancies enhance pseudocapacitive charge storage properties of MoO3-x
Hyung-Seok Kim1, John B Cook2,3, Hao Lin1
1Department of Materials Science and Engineering, UCLA, Los Angeles, California 90095-1595, USA.
Abstract:
The short charging times and high power capabilities associated with capacitive energy storage make this approach an attractive alternative to batteries. One limitation of electrochemical capacitors is their low energy density and for this reason, there is widespread interest in pseudocapacitive materials that use Faradaic reactions to store charge. One candidate pseudocapacitive material is orthorhombic MoO3 (α-MoO3), a layered compound with a high theoretical capacity for lithium (279 mA h g-1 or 1,005 C g-1). Here, we report on the properties of reduced α-MoO3-x(R-MoO3-x) and compare it with fully oxidized α-MoO3 (F-MoO3). The introduction of oxygen vacancies leads to a larger interlayer spacing that promotes faster charge storage kinetics and enables the α-MoO3 structure to be retained during the insertion and removal of Li ions. The higher specific capacity of the R-MoO3-x is attributed to the reversible formation of a significant amount of Mo4+ following lithiation. This study underscores the potential importance of incorporating oxygen vacancies into transition metal oxides as a strategy for increasing the charge storage kinetics of redox-active materials.
More Related Videos
05:47Preparation of Polyoxometalate-based Photo-responsive Membranes for the Photo-activation of Manganese Oxide Catalysts
Published on: August 7, 2018
06:53Author Spotlight: Magnetometric Characterization of Intermediates in the Solid-State Electrochemistry of Redox-Active Metal-Organic Frameworks
Published on: June 9, 2023
Related Concept Videos
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Dielectric Polarization in a Capacitor
Energy Stored in Capacitors
By integrating the equation that relates voltage and current in a capacitor, one can derive an equation for the voltage across the capacitor at any given time. This equation is crucial in understanding and predicting the behavior of capacitors in...
Energy Stored in a Capacitor
Capacitors and Capacitance
When the conductors are two identical parallel plates, it is called a parallel plate capacitor. When battery terminals are...