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Strong Fermi-Level Pinning at Metal/n-Si(001) Interface Ensured by Forming an Intact Schottky Contact with a Graphene

Hoon Hahn Yoon, Sungchul Jung, Gahyun Choi

  • 1Department of Physics and Energy Harvest-Storage Reseach Center (EHSRC), University of Ulsan , Ulsan 44610, Republic of Korea.

Nano Letters
|December 15, 2016
PubMed

Keywords:
Fermi-level pinningSchottky barrierdiffusion barriergrapheneintact interfaceinternal photoemission

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