Edge Dislocations Triggered Surface Instability in Tensile Epitaxial Hexagonal Nitride Semiconductor.
Jianpeng Cheng1, Xuelin Yang1, Jie Zhang1
1State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University , Beijing 100871, P. R. China.
ACS Applied Materials & Interfaces
|December 15, 2016
Summary
Edge dislocations cause nanoscale fissures and surface instability in aluminum gallium nitride/gallium nitride (AlGaN/GaN) heterostructures. This instability is further influenced by stress and hydrogen etching, impacting device performance.
Area of Science:
- Materials Science
- Semiconductor Physics
- Surface Science
Background:
- Semiconductor surface properties are critical for device performance and understanding growth kinetics.
- Surface instability in AlGaN/GaN heterostructures is a known issue affecting device reliability.
Purpose of the Study:
- Investigate the root cause of nanoscale fissures and surface instability in AlGaN/GaN heterostructures.
- Clarify the mechanisms driving the evolution of surface features.
Main Methods:
- Experimental analysis of AlGaN/GaN heterostructures exhibiting surface instability.
- Microscopic and spectroscopic techniques to identify surface morphologies and defect origins.
Main Results:
- Edge dislocations were identified as the primary trigger for nanoscale fissure formation.
- Surface instability evolution is linked to tensile lattice-mismatch stress and hydrogen etching.
Conclusions:
- Edge dislocations are the fundamental cause of surface instability in AlGaN/GaN heterostructures.
- Findings provide insights into surface growth kinetics for hexagonal semiconductors.
