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Oxide-Based Solar Cell: Impact of Layer Thicknesses on the Device Performance
Shrabani Panigrahi1, Daniela Nunes1, Tomás Calmeiro1
1i3N/CENIMAT, Department of Materials Science, Faculty of Sciences and Technology, Universidade Nova de Lisboa , Campus de Caparica, 2829-516 Caparica, Portugal.
This study fabricated ZnO/Cu2O solar cells using spray pyrolysis, finding optimal performance with specific layer thicknesses. Device efficiency is highly sensitive to absorber layer thickness, crucial for maximizing solar energy conversion.
Area of Science:
- Materials Science
- Renewable Energy
- Semiconductor Physics
Background:
- Zinc oxide (ZnO) and copper(I) oxide (Cu2O) are promising materials for thin-film solar cells.
- Combinatorial fabrication allows rapid screening of material parameters.
- Understanding layer thickness effects is crucial for optimizing heterojunction solar cell performance.
Purpose of the Study:
- To fabricate a library of ZnO/Cu2O heterojunction solar cells.
- To investigate the influence of ZnO and Cu2O layer thicknesses on photovoltaic performance.
- To determine the optimal thickness for maximizing solar cell efficiency.
Main Methods:
- Spray pyrolysis technique used for device fabrication on ITO-coated glass.
- Combinatorial approach varying ZnO (50-320 nm) and Cu2O (200-800 nm) layer thicknesses.
- Photovoltaic performance characterization, including short-circuit current density (Jsc).
Main Results:
- Photovoltaic performance strongly depends on absorber (Cu2O) layer thickness.
- Maximum Jsc of 3.9 mA/cm² achieved when Cu2O thickness exceeds ~700 nm.
- Reduced layer thicknesses significantly decrease device performance due to optical losses and recombination.
Conclusions:
- Optimal ZnO/Cu2O heterojunction solar cell performance requires specific, relatively thick absorber layers.
- Device efficiency is limited by interfacial phenomena and insufficient built-in bias formation in thinner layers.
- Spray pyrolysis is a viable method for fabricating combinatorial libraries of ZnO/Cu2O solar cells.
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