Sub-Terahertz Memristor Switches Using MoS₂ by Liquid-Liquid Interface Assembly

This study demonstrates the first application-ready radio-frequency (RF) switches based on memristors fabricated via electrochemical exfoliation and liquid-liquid interfacial assembly. This 2D layer deposition method produces uniform, low-defect bilayer molybdenum disulfide (MoS₂) nanosheet networks without the high temperatures or hazardous gases typical of chemical vapor deposition, providing a low-cost, environmentally friendly route toward CMOS-compatible integration. The resulting devices exhibit robust unipolar resistive switching, simplifying biasing and lowering power consumption compared to bipolar solutions. Devices show reproducibility with 10⁴ s retention and 100-cycle endurance. RF characterization confirms reliable operation across 10-110 GHz with low insertion loss (0.42-0.9 dB), isolation above 18 dB, and an intrinsic cut-off frequency of ∼5.4 THz. The viability for integration into energy-efficient wireless communication platforms is assessed by simulation of a 24 × 24 elements reconfigurable intelligent surface. High gain (>21.6 dBi) and efficient beam steering (-60°-60°) across the 26.8-29.1 GHz band demonstrate the utility of these novel non-volatile RF switches in next-generation mmWave communication, including 5G/6G and satellite systems.