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Graphene Substrate for van der Waals Epitaxy of Layer-Structured Bismuth Antimony Telluride Thermoelectric Film
Eun Sung Kim1, Jae-Yeol Hwang1, Kyu Hyoung Lee2
1Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea.
Advanced Materials (Deerfield Beach, Fla.)
|December 21, 2016
Abstract:
Graphene as a substrate for the van der Waals epitaxy of 2D layered materials is utilized for the epitaxial growth of a layer-structured thermoelectric film. Van der Waals epitaxial Bi0.5 Sb1.5 Te3 film on graphene synthesized via a simple and scalable fabrication method exhibits good crystallinity and high thermoelectric transport properties comparable to single crystals.
