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High peak power cavity dumping semiconductor lasers.

Joshua Myers, Chris Kokoczka, Gary Cook

    Optics Letters
    |January 7, 2017
    PubMed
    Summary
    This summary is machine-generated.

    We developed a high-power semiconductor laser using a novel cavity-dumping technique. This laser delivers kW-class pulses for applications in laser radar, nonlinear optics, and materials processing.

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    Area of Science:

    • Optics and Photonics
    • Semiconductor Lasers

    Background:

    • Optically pumped semiconductor lasers offer advantages in efficiency and wavelength flexibility.
    • High-energy pulsed operation is crucial for applications like laser radar and materials processing.

    Purpose of the Study:

    • To develop a nanosecond pulsed, kW-class optically pumped Indium Gallium Arsenide (InGaAs) semiconductor laser.
    • To explore cavity-dumping techniques for enhancing pulse energy in Vertical External Cavity Surface Emitting Lasers (VECSELs).

    Main Methods:

    • Utilized an intracavity Pockels cell for cavity-dumping VECSELs.
    • Employed an optically pumped InGaAs gain medium operating around 1020 nm.
    • Investigated energy storage within the optical cavity.

    Main Results:

    • Achieved peak powers exceeding 1 kW and pulse energies of 3 μJ.
    • Demonstrated pulse durations equivalent to the photon round-trip time.
    • Showcased wavelength tunability within the semiconductor gain bandwidth.

    Conclusions:

    • The developed VECSEL design enables high-energy nanosecond pulse generation.
    • Cavity dumping is an effective method for achieving kW-class peak powers from semiconductor lasers.
    • The laser is suitable for incoherent laser radar, nonlinear optics, and materials processing applications.