Flexible All-Inorganic Perovskite CsPbBr₃ Nonvolatile Memory Device.

Area of Science:

• Materials Science
• Solid-State Physics
• Device Engineering

Background:

• All-inorganic perovskite CsPbX3 materials are vital for photoelectric devices like solar cells and LEDs.
• Flexible applications of CsPbX3 are limited by low-temperature fabrication challenges.

Purpose of the Study:

• To fabricate flexible CsPbBr3 perovskite films at low temperatures for nonvolatile memory applications.
• To investigate the resistive switching characteristics and reliability of these flexible devices.

Main Methods:

• A two-step method was used to fabricate CsPbBr3 films at 75 °C.
• The films were integrated into an Al/CsPbBr3/PEDOT:PSS/ITO/PET device structure.
• Resistive switching operations, endurance tests, and bending tests were performed.

Main Results:

• Highly crystallized CsPbBr3 films were successfully prepared at a low temperature of 75 °C.
• The flexible memory devices exhibited reproducible and reliable resistive switching characteristics and good endurance.
• The devices demonstrated electrical reliability and mechanical stability under various bending conditions.

Conclusions:

• Low-temperature fabrication of CsPbBr3 perovskite films is feasible for flexible nonvolatile memory.
• The proposed filament formation/rupture model explains the resistive switching mechanism.
• This work paves the way for designing stable, flexible perovskite-based electronic devices.