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Published on: April 12, 2018
Conductivity Modulation of Gold Thin Film at Room Temperature via All-Solid-State Electric-Double-Layer Gating
Tetsuya Asano1, Yukihiro Kaneko1, Atsushi Omote1
1Advanced Research Division, Panasonic Corporation , 1006 Kadoma, Osaka 571-8501, Japan.
Abstract:
We demonstrated the field-effect conductivity modulation of a gold thin film by all-solid-state electric-double-layer (EDL) gating at room temperature using an epitaxially grown oxide fast lithium conductor, La2/3-xLi3xTiO3 (LLT), as a solid electrolyte. The linearly increasing gold conductivity with increasing gate bias demonstrates that the conductivity modulation is indeed due to carrier injection by EDL gating. The response time becomes exponentially faster with increasing gate bias, a result of the onset of nonlinear ionic transportation. This nonlinear dynamic response indicates that the ionic motion-driven device can be much faster than would be estimated from a linear ionic transport model.
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