Engineering the Structural and Electronic Phases of MoTe2 through W Substitution
D Rhodes1,2, D A Chenet3, B E Janicek4
1National High Magnetic Field Laboratory, Florida State University , Tallahassee, Florida 32310, United States.
Tungsten substitution in Molybdenum Ditelluride (MoTe2) stabilizes the topological gamma-phase at room temperature. This discovery paves the way for new electronic devices by enabling phase control in transition metal dichalcogenides.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Solid-State Chemistry
Background:
- Molybdenum Ditelluride (MoTe2) exists in multiple crystalline phases (2H, 1T', γ) with distinct electronic properties.
- The semiconducting 2H-phase is suitable for optoelectronics, while the semimetallic γ-phase exhibits topological properties.
- Phase transformations in MoTe2 can be induced by external stimuli, offering potential for novel functionalities.
Purpose of the Study:
- To investigate the effect of Tungsten (W) substitution on the phase stability of MoTe2.
- To map the phase diagram of the Mo1-xWxTe2 solid solution.
- To identify conditions for stabilizing the topological γ-phase of MoTe2.
Main Methods:
- Synthesis of Mo1-xWxTe2 solid solutions with varying W concentrations (x).
- X-ray diffraction and photoemission spectroscopy to characterize crystal structure and electronic properties.
- Analysis of the phase diagram to determine phase transition boundaries.
Main Results:
- A phase diagram for Mo1-xWxTe2 was established, showing a transition from semiconducting to semimetallic behavior with increasing W content.
- A critical W concentration (xc ≈ 8%) was identified, stabilizing the γ-phase at room temperature.
- The γ-phase was found to possess a Fermi surface similar to that of WTe2.
Conclusions:
- W substitution is an effective method to engineer the phase of MoTe2.
- The critical W concentration provides a pathway to stabilize the topological γ-phase, crucial for exploring its unique transport properties.
- Materials near the phase transition are promising candidates for electric-field-induced phase transformations, enabling advanced electronic devices.
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