An Automated Reverse-Bias Second-Breakdown Transistor Tester.

Area of Science:

• Electrical Engineering
• Materials Science
• Semiconductor Physics

Background:

• Transistor reliability is critical for electronic devices.
• Characterizing the safe-operating area (SOA) is essential for preventing device failure.
• Current SOA testing methods can be time-consuming and potentially destructive.

Purpose of the Study:

• To present an automated instrument for non-destructive measurement of transistor reverse-bias safe-operating area (SOA) curves.
• To introduce a novel technique for detecting second breakdown, facilitating automation.
• To discuss methods for reducing stress on devices under test (DUT) and other automation enhancements.

Main Methods:

• Development of an automated instrument for SOA curve generation.
• Implementation of a new second breakdown detection technique.
• Application of stress-reduction methods during testing.
• Conducting measurements using the developed automated tester.

Main Results:

• Successful generation of non-destructive reverse-bias SOA curves for transistors.
• Demonstration of a reliable automated second breakdown detection method.
• Validation of stress-reduction techniques for enhanced device longevity during testing.

Conclusions:

• The developed automated instrument enables efficient and non-destructive SOA characterization.
• The novel second breakdown detection technique is key to achieving full automation.
• Further research can explore limitations and expand applications of non-destructive testing.