A Study on the Thermomechanical Reliability Risks of Through-Silicon-Vias in Sensor Applications

Shuai Shao1, Dapeng Liu2, Yuling Niu3

  • 1Department of Mechanical Engineering, State University of New York at Binghamton, P.O. Box 6000, Binghamton, NY 13902, USA. sshao1@binghamton.edu.

Summary

This study analyzes reliability risks in two types of through-silicon-vias (TSVs): polymer-filled copper TSVs and polycrystalline silicon-filled TSVs. Finite element analysis and fracture mechanics identify key stress points and void risks in TSV reliability.

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