Related Experiment Video
Updated: Mar 7, 2026

Fabrication and Testing of Photonic Thermometers
Published on: October 24, 2018
A Study on the Thermomechanical Reliability Risks of Through-Silicon-Vias in Sensor Applications
Shuai Shao1, Dapeng Liu2, Yuling Niu3
1Department of Mechanical Engineering, State University of New York at Binghamton, P.O. Box 6000, Binghamton, NY 13902, USA. sshao1@binghamton.edu.
This study analyzes reliability risks in two types of through-silicon-vias (TSVs): polymer-filled copper TSVs and polycrystalline silicon-filled TSVs. Finite element analysis and fracture mechanics identify key stress points and void risks in TSV reliability.
Area of Science:
- Materials Science
- Electrical Engineering
- Mechanical Engineering
Background:
- Through-silicon-vias (TSVs) are critical for 3D integrated circuits.
- Assessing reliability risks in TSVs is essential for device longevity.
- Different TSV filling methods present unique failure mechanisms.
Purpose of the Study:
- To investigate reliability risks in partially-filled copper TSVs and polycrystalline silicon-filled TSVs.
- To identify and rank stress concentrations in polymer-filled copper TSVs.
- To evaluate fracture risks associated with voids in polycrystalline silicon TSVs under various assembly conditions.
Main Methods:
- Finite Element Analysis (FEA) modeling for stress analysis in copper TSVs.
- Parametric studies on polymer material properties (modulus, thermal expansion).
- Fracture mechanics evaluation for polycrystalline silicon TSVs with voids.
Main Results:
- FEA identified and ranked critical stress sites in polymer-filled copper TSVs.
- Parametric studies revealed the impact of polymer properties on TSV reliability.
- Fracture mechanics analysis quantified risks for polycrystalline silicon TSVs based on void characteristics and assembly conditions.
Conclusions:
- Polymer properties significantly influence the reliability of partially-filled copper TSVs.
- Voids in polycrystalline silicon TSVs pose a considerable fracture risk, dependent on assembly and void parameters.
- This research provides critical insights for designing more reliable TSV interconnects.
More Related Videos
09:03A Silicon-tipped Fiber-optic Sensing Platform with High Resolution and Fast Response
Published on: January 7, 2019
04:09Demonstrating the Simplicity and In Situ Temperature Monitoring of the Mechanochemical Synthesis of Metal Chalcogenides Suitable for Thermoelectrics
Published on: August 30, 2024
Related Concept Videos
Thermal expansion and Thermal stress: Problem Solving
To solve the problem, first, identify the known and unknown quantities. The initial length (L) of the bridge is 1275 m, the coefficient of linear expansion (α) for steel is 12 x 10-6/°C, and the change in temperature (ΔT) is 55...
Thermal Stress
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Non-ohmic Devices
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
Thermal Strain