Self-Rectifying Resistive Switching Memory with Ultralow Switching Current in Pt/Ta2O5/HfO2-x /Hf Stack

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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Haili Ma1, Jie Feng2, Hangbing Lv3

  • 1Department of Micro/Nano Electronics, Key Laboratory for Thin Film and Micro Fabrication of Ministry of Education, Shanghai Jiao Tong University, Shanghai, China.

Nanoscale Research Letters
|February 24, 2017
PubMed

Keywords:
CrossbarLeakage current issueRRAMSelf-rectifying

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