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Published on: April 12, 2018
Odd-Integer Quantum Hall States and Giant Spin Susceptibility in p-Type Few-Layer WSe_{2}
Shuigang Xu1, Junying Shen1, Gen Long1
1Department of Physics and Center for Quantum Materials, the Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China.
High-mobility few-layer tungsten diselenide (WSe_{2}) transistors exhibit unusual odd-integer quantum Hall states. This suggests strong exchange interactions and potential ferromagnetism in this 2D material.
Area of Science:
- Condensed Matter Physics
- Materials Science
- 2D Materials
Background:
- Few-layer tungsten diselenide (WSe_{2}) is a promising 2D material for electronic applications.
- Understanding its electronic properties under magnetic fields is crucial for device development.
Purpose of the Study:
- To investigate the quantum Hall (QH) effect in high-mobility p-type few-layer WSe_{2} transistors.
- To explore the role of magnetic field orientation and exchange interactions.
Main Methods:
- Fabrication of p-type few-layer WSe_{2} field-effect transistors.
- Measurement of quantum Hall states under moderate magnetic fields.
- Tilting the magnetic field to study Landau level crossing effects.
Main Results:
- Observation of an unconventional QH state sequence dominated by odd-integer states.
- Discovery of Landau level crossings at ultralow angles.
- Zeeman energy found to be approximately 3 times the cyclotron energy near the valence band top at the Γ valley.
- Evidence for significant exchange interactions and potential QH ferromagnetism.
Conclusions:
- The Γ valley in few-layer WSe_{2} hosts heavy hole carriers and an enhanced g factor.
- This system serves as a unique platform for exploring strongly correlated phenomena.
- Exchange interactions play a significant role in the observed quantum phenomena.
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