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One Way to Design a Valence-Skip Compound.

I Hase1, T Yanagisawa2, K Kawashima3

  • 1National Institute of Advanced Industrial Science and Technology (AIST), AIST Central 2, Umezono 1-1-4, Tsukuba, Ibaraki, 305-8568, Japan. i.hase@aist.go.jp.

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|February 26, 2017
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Summary

Valence-skip compounds show promise for high critical temperature (Tc) superconductivity. Researchers designed these materials using first-principles calculations, confirming stable charge-density waves in RbTlCl3 that can be collapsed under pressure.

Keywords:
BaBiO3CDWElectronic structureRbTlCl3SuperconductivityValence skip

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Computational Chemistry

Background:

  • Valence-skip compounds offer potential for high critical temperature (Tc) and low anisotropy due to strong attractive interactions.
  • Synthesis challenges include unstable valence states, competing charge orders, and ambiguous formal valences.

Purpose of the Study:

  • To explore the design principles of valence-skip compounds using first-principles calculations.
  • To investigate the electronic structure and properties of RbTlCl3 as a promising candidate.

Main Methods:

  • First-principles calculations were employed to design and analyze valence-skip compounds.
  • Electronic structure calculations were performed for RbTlCl3.
  • Structure optimization studies were conducted under varying pressures.

Main Results:

  • First-principles calculations guided the design of valence-skip compounds.
  • RbTlCl3 exhibits a stable charge-density wave (CDW) at ambient pressure, with Tl atoms adopting 1+ and 3+ valences.
  • The CDW in RbTlCl3 collapses under several gigapascals of pressure, leading to a metallic phase.

Conclusions:

  • First-principles calculations are effective tools for designing valence-skip compounds.
  • RbTlCl3 presents a stable CDW, which can be tuned by pressure.
  • The pressure-induced metallic phase in RbTlCl3 is predicted to exhibit significant charge fluctuation and electron-phonon interaction.