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Effects of Nitrogen and Hydrogen Codoping on the Electrical Performance and Reliability of InGaZnO Thin-Film

Ablat Abliz1, Qingguo Gao2, Da Wan1

  • 1Department of Microelectronics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University , Wuhan 430072, China.

ACS Applied Materials & Interfaces
|March 8, 2017
PubMed

Keywords:
InGaZnOlow-frequency noiseplasma treatmentreliabilitythin-film transistors

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