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Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects.
Johannes Gooth1, Mattias Borg1, Heinz Schmid1
1IBM Research - Zurich , Säumerstrasse 4, 8803 Rüschlikon, Switzerland.
Nano Letters
|March 24, 2017
Summary
Semiconductor nanowire (NW) cross-junctions enable ballistic quantum transport for quantum information technology. These InAs NW devices on silicon demonstrate reliable 1D quantum information transfer across multiple junctions.
Area of Science:
- Quantum Information Science
- Condensed Matter Physics
- Materials Science
Background:
- Quantum information technology relies on coherent interconnection of quantum bits.
- Semiconductor nanowire (NW) circuits with ballistic interconnects are a promising hardware approach.
- Maintaining ballistic conduction and confinement at NW intersections is challenging.
Purpose of the Study:
- To demonstrate ballistic one-dimensional (1D) quantum transport in InAs NW cross-junctions.
- To investigate the feasibility of NW cross-junctions for quantum information transfer.
Main Methods:
- Monolithic integration of InAs NWs on silicon.
- Fabrication of NW cross-junctions.
- Field-effect measurements to characterize quantum transport.
Main Results:
- Resolved characteristic 1D conductance plateaus in field-effect measurements across up to four NW-junctions in series.
- Preserved 1D ballistic transport and sub-band splitting in both crossing directions.
- Demonstrated distribution of 1D modes from a single injection terminal into multiple NW branches.
Conclusions:
- InAs NW cross-junctions exhibit robust ballistic 1D quantum transport.
- These NW cross-junctions are suitable for cross-directional communication links in quantum computing systems.
- The findings advance the development of reliable quantum information transfer hardware.
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