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X-ray induced electrostatic graphene doping via defect charging in gate dielectric
Pavel Procházka1,2, David Mareček2, Zuzana Lišková1,2
1CEITEC - Central European Institute of Technology, Brno University of Technology, Purkyňova 123, 612 00, Brno, Czech Republic.
Scientific Reports
|April 5, 2017
Summary
X-ray irradiation causes negative doping in graphene field-effect transistors by charging defects. This effect can be reversed with negative gate voltage, enabling new tuning strategies for graphene properties.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Graphene field-effect transistors (GFETs) are crucial components in advanced electronic devices.
- Advanced characterization and tuning methods for graphene are essential for device optimization.
Purpose of the Study:
- To investigate the impact of X-ray irradiation on graphene properties.
- To explore strategies for tuning graphene's electronic characteristics using X-rays.
Main Methods:
- Irradiation of graphene devices with X-rays at varying gate voltages (zero and negative).
- Measurement of graphene's electrical transport properties, specifically the charge neutrality point.
Main Results:
- X-ray irradiation at zero gate voltage induces significant negative doping in graphene.
- This negative doping is attributed to X-ray radiation-induced charging of defects in the gate dielectric.
- Applying a negative gate voltage during X-ray irradiation neutralizes the induced charge, shifting the charge neutrality point back to zero.
Conclusions:
- X-ray irradiation alters graphene's electronic state, impacting the interpretation of X-ray-based measurements.
- The findings provide a basis for remote X-ray tuning of graphene transport properties.
- This research supports the development of X-ray sensors utilizing the graphene/oxide interface.