Related Experiment Videos
Oscillating Magnetoresistance in Graphene p-n Junctions at Intermediate Magnetic Fields
Hiske Overweg1, Hannah Eggimann1, Ming-Hao Liu2,3
1Solid State Physics Laboratory, ETH Zürich , CH-8093 Zürich, Switzerland.
Nano Letters
|April 7, 2017
Abstract:
We report on the observation of magnetoresistance oscillations in graphene p-n junctions. The oscillations have been observed for six samples, consisting of single-layer and bilayer graphene, and persist up to temperatures of 30 K, where standard Shubnikov-de Haas oscillations are no longer discernible. The oscillatory magnetoresistance can be reproduced by tight-binding simulations. We attribute this phenomenon to the modulated densities of states in the n- and p-regions.