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Racetrack memory based on in-plane-field controlled domain-wall pinning.
Fanny Ummelen1, Henk Swagten2, Bert Koopmans2
1Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB, Eindhoven, The Netherlands. f.c.ummelen@tue.nl.
Scientific Reports
|April 13, 2017
Summary
This study introduces a novel racetrack memory concept using interfacial Dzyaloshinskii-Moriya interaction (DMI) to move magnetic domain walls with magnetic fields. This approach overcomes limitations of high current densities and complex geometries for future data storage.
Area of Science:
- Spintronics
- Materials Science
- Data Storage Technologies
Background:
- Racetrack memory concepts aim for mechanical-free data storage using magnetic domain walls.
- Existing concepts often require high current densities or intricate device designs.
- Interfacial Dzyaloshinskii-Moriya interaction (DMI) in magnetic thin films is a recently discovered phenomenon with potential applications.
Purpose of the Study:
- To introduce and validate a new racetrack memory device concept.
- To demonstrate domain wall motion solely driven by magnetic fields.
- To leverage interfacial DMI for unidirectional domain wall movement.
Main Methods:
- Device concept based on interfacial Dzyaloshinskii-Moriya interaction (DMI).
- Utilizing the chiral nature of DMI to control domain wall pinning at anisotropy barriers.
- Proof-of-principle experiments to verify unidirectional domain wall motion.
- Investigation of various material stacks and device performance analysis.
Main Results:
- Successful demonstration of unidirectional magnetic domain wall motion.
- Domain wall movement achieved solely by magnetic fields, eliminating high current density requirements.
- Chiral nature of DMI exploited to control pinning and depinning at anisotropy barriers.
- Analysis of device performance across different material stacks.
Conclusions:
- The proposed device concept offers a promising alternative for racetrack memory technology.
- Interfacial DMI provides a viable mechanism for efficient and controlled magnetic domain wall motion.
- This approach could lead to next-generation data storage devices with improved performance and simplified design.