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Learning to draw Fischer projections of molecules and understanding their relevance plays a crucial role in the visual depiction of organic molecules. A Fischer projection is a two-dimensional projection on a planar surface to simplify the three-dimensional wedge–dash representation of molecules. This is especially helpful in the case of molecules with multiple chiral centers that can be difficult to draw. Here, all the bonds of interest are represented as horizontal or vertical lines.
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Fabrication of Three-Dimensional Graphene-Based Polyhedrons via Origami-Like Self-Folding
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Remote epitaxy through graphene enables two-dimensional material-based layer transfer.

Yunjo Kim1, Samuel S Cruz1, Kyusang Lee1

  • 1Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.

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Researchers demonstrate van der Waals epitaxy is possible through graphene, enabling semiconductor growth on diverse substrates. This novel method allows for facile layer release and reusability of graphene-coated substrates, benefiting non-silicon electronics and photonics.

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Surface Science

Background:

  • Epitaxy is vital for semiconductors but typically requires lattice matching.
  • Van der Waals epitaxy uses 2D materials to relax lattice-matching constraints.
  • Previous understanding limited van der Waals epitaxy to 2D materials as seed layers only.

Purpose of the Study:

  • To investigate if substrates beneath 2D materials can influence epitaxy.
  • To demonstrate remote epitaxial registry through a 2D material layer.
  • To develop a method for transferring epitaxial films using 2D materials.

Main Methods:

  • Density functional theory (DFT) calculations to model adatom-substrate interactions.
  • Experimental validation using homoepitaxial growth of GaAs(001) on GaAs(001) through graphene.
  • Testing the method with Indium Phosphide (InP) and Gallium Phosphide (GaP).

Main Results:

  • Graphene's van der Waals potential does not fully screen substrate potentials, allowing remote epitaxial registry up to 9 ångströms.
  • Successful homoepitaxial growth of GaAs, InP, and GaP through monolayer graphene.
  • Epitaxial films were rapidly released from graphene and performed comparably to conventionally grown films.

Conclusions:

  • Substrate potentials can mediate epitaxy through 2D materials, expanding van der Waals epitaxy possibilities.
  • This technique enables the transfer of diverse semiconductor films, facilitating non-silicon device fabrication.
  • Reusability of graphene-coated substrates offers significant cost savings for advanced electronic and photonic applications.