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Charge transfer driven emergent phenomena in oxide heterostructures.

Hanghui Chen1,2, Andrew Millis3

  • 1NYU-ECNU Institute of Physics, New York University Shanghai, 200062, People's Republic of China.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|April 25, 2017
PubMed
Summary

Charge transfer at oxide interfaces creates novel properties not found in bulk materials. This review explores mechanisms, consequences, and theoretical methods for understanding these emergent phenomena in oxide heterostructures.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Solid State Chemistry

Background:

  • Complex oxides display remarkable properties like superconductivity and ferroelectricity.
  • Epitaxial thin film techniques allow precise construction of oxide heterostructures.
  • Interfacial charge transfer in these heterostructures leads to emergent properties.

Purpose of the Study:

  • To review mechanisms and physical consequences of charge transfer across oxide interfaces.
  • To compare theoretical proposals with experimental measurements in oxide heterostructures.
  • To discuss theoretical methods for calculating interfacial charge transfer.

Main Methods:

  • Review of theoretical proposals and experimental measurements.
  • Analysis of various oxide heterostructures.
  • Examination of theoretical calculation methods for charge transfer.

Main Results:

  • Charge transfer is a common phenomenon at oxide interfaces.
  • Interfacial charge transfer results in emergent properties distinct from bulk constituents.
  • Various theoretical and experimental approaches exist to study these phenomena.

Conclusions:

  • Understanding interfacial charge transfer is key to designing novel oxide heterostructures.
  • Further research is needed to address challenges in theoretical predictions and experimental validation.
  • Future work should focus on harnessing these emergent properties for technological applications.