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pMOSFETs Featuring ALD W Filling Metal Using SiH4 and B2H6 Precursors in 22 nm Node CMOS Technology

Guilei Wang1,2, Jun Luo3,4, Jinbiao Liu3

  • 1Key laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China. wangguilei@ime.ac.cn.

Nanoscale Research Letters
|April 29, 2017
PubMed

Keywords:
ALD WHigh-k and metal gate (HKMG)MobilityNano-beam diffraction (NBD)Threshold voltage (V t )

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