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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Updated: Mar 2, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

Realizing Stable p-Type Transporting in Two-Dimensional WS₂ Films.

Qian Cao¹, Ya-Wei Dai¹, Jing Xu¹

¹State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University , Shanghai 200433, China.

ACS Applied Materials & Interfaces

|May 9, 2017

Summary

This summary is machine-generated.

Stable p-type doping of two-dimensional (2D) semiconductors like WS2 is achieved using nitrogen substitution during film sulfurization. This method enables reproducible, wafer-level fabrication for advanced 2D CMOS electronics.

Keywords:

nitrogen-doped p-type doping thin-film transistor tungsten sulfide two-dimensional semiconductor

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Last Updated: Mar 2, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

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Published on: November 28, 2017

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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Two-dimensional (2D) semiconductors offer unique properties for nanoelectronics.
Reproducible p-type doping remains a challenge, hindering complementary metal-oxide-semiconductor (CMOS) integration.
Existing charge transfer doping methods often lack stability.

Purpose of the Study:

To develop a stable and reproducible p-type doping method for WS2.
To enable large-scale 2D CMOS device applications.
To investigate the physical properties of nitrogen-doped WS2.

Main Methods:

Substitutional doping of sulfur with nitrogen during WOxNy film sulfurization.
Fabrication of WS2-based field-effect transistors.
Experimental and theoretical investigations of film properties.

Main Results:

Achieved stable p-type doping of WS2 with excellent layer controllability and wafer-level uniformity.
Nitrogen atoms act as acceptors, shifting the Fermi level towards the valence band.
WS2 transistors demonstrated a high on/off current ratio (~10^5) and hole mobility (~18.8 cm^2 V^-1 s^-1).

Conclusions:

A promising method for stable p-type doping of 2D materials is presented.
This technique is highly attractive for future large-scale 2D CMOS device applications.
Nitrogen substitutional doping offers a viable route for advanced semiconductor devices.