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Quantum Hall Spin Diode.

J P Eisenstein1, L N Pfeiffer2, K W West2

  • 1Institute for Quantum Information and Matter, Department of Physics, California Institute of Technology, Pasadena, California 91125, USA.

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Summary
This summary is machine-generated.

Magnetic tunnel junctions using two-dimensional electron systems demonstrate near-ideal spin diode behavior. Thermal spin waves degrade performance at higher temperatures, but confirm complete spin polarization in Landau levels.

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Area of Science:

  • Condensed Matter Physics
  • Quantum Materials

Background:

  • Two-dimensional electron systems (2DES) exhibit unique electronic properties under high magnetic fields.
  • Magnetic tunnel junctions are crucial for spintronic devices, enabling control over electron spin.

Purpose of the Study:

  • To investigate the spin properties of 2DES in a magnetic tunnel junction configuration.
  • To characterize the temperature dependence of spin diode behavior in these junctions.
  • To assess spin polarization and Landau level mixing at fractional filling factors.

Main Methods:

  • Fabrication of magnetic tunnel junctions using double-layer 2DES.
  • Application of high perpendicular and in-plane magnetic fields.
  • Low-temperature electrical transport measurements to analyze spin diode characteristics.

Main Results:

  • Antiparallel spin alignment in the tunnel junction exhibits near-ideal spin diode behavior at low temperatures.
  • Thermal excitation of spin waves at elevated temperatures degrades the spin diode performance.
  • Demonstration of complete spin polarization in the N=1 Landau level at filling factors ν=5/2 and 7/2.
  • Evidence of weak Landau level mixing in the studied samples.

Conclusions:

  • The studied magnetic tunnel junctions serve as effective spin diodes, particularly at low temperatures.
  • Temperature-dependent degradation is linked to thermally excited spin waves.
  • The results confirm high spin polarization and minimal Landau level mixing in specific 2DES configurations.