Electrosynthesis of bismuth nanodendrites/gallium nitride electrode for non-enzymatic hydrogen peroxide detection

Bismuth nanodendrites (BiNDs) were electrodeposited on planar gallium nitride (GaN) electrode via a differential pulse voltammetric technique to fabricate the non-enzymatic hydrogen peroxide (H₂O₂) sensor. SEM images revealed that the as-obtained BiNDs had numerous dendrite sub-branches, whose diameters ranged from 136 to 152nm. The BiNDs/GaN electrode showed linear amperometric responses for H₂O₂ in the concentration range from 10µM to 1mM with the sensitivity of 60.0μAmM^-1cm^-2. Another linear range was from 1 to 10mM with the sensitivity of 23.3μAmM^-1cm^-2. The limit of detection (LOD) was 5µM with the signal-to-noise ratio of 3. The applicability of the sensor was investigated to the H₂O₂ detection in real samples such as fetal bovine serum and milk, and the sensor exhibited excellent anti-interference capacity. The achieved results indicate that the as-prepared BiNDs/GaN sensor with good reproducibility and long-term stability was promising for detecting H₂O₂ in practical environments.