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Preparing local strain patterns in graphene by atomic force microscope based indentation.
Péter Nemes-Incze1, Gergő Kukucska2, János Koltai2
1Centre for Energy Research, Institute of Technical Physics and Materials Science, Nanotechnology Department, 2D NanoFab ERC Research Group, Budapest, 1525, POB 49, Hungary. nemes.incze.peter@energia.mta.hu.
Scientific Reports
|June 10, 2017
Summary
Researchers developed a new atomic force microscope technique to create controlled strain patterns in graphene. This method offers a way to engineer graphene
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Lithographic techniques pattern graphene devices, controlling charge carriers but facing challenges with edge configurations.
- Strain engineering in graphene offers potential for rich physics, but controlled patterning methods are lacking.
- Tailoring graphene properties via mechanical deformation requires versatile strain patterning techniques.
Purpose of the Study:
- To present a novel technique for creating controlled strain profiles in graphene.
- To enable the engineering of graphene properties through mechanical strain.
Main Methods:
- Utilized an atomic force microscope (AFM)-based technique.
- Applied the method to substrate-supported graphene layers.
Main Results:
- Successfully demonstrated a process for creating strain in graphene layers.
- Developed a versatile method for controlled strain patterning.
Conclusions:
- The AFM-based technique provides new possibilities for tailoring graphene properties.
- Strain engineering offers an alternative to lithography for manipulating graphene's electronic characteristics.
