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Updated: Feb 27, 2026

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
Published on: October 12, 2019
Gate-Defined One-Dimensional Channel and Broken Symmetry States in MoS2 van der Waals Heterostructures
Riccardo Pisoni1, Yongjin Lee1, Hiske Overweg1
1Solid State Physics Laboratory, ETH Zürich , CH-8093 Zürich, Switzerland.
Abstract:
We have realized encapsulated trilayer MoS2 devices with gated graphene contacts. In the bulk, we observe an electron mobility as high as 7000 cm2/(V s) at a density of 3 × 1012 cm-2 at a temperature of 1.9 K. Shubnikov-de Haas oscillations start at magnetic fields as low as 0.9 T. The observed 3-fold Landau level degeneracy can be understood based on the valley Zeeman effect. Negatively biased split gate electrodes allow us to form a channel that can be completely pinched off for sufficiently large gate voltages. The measured conductance displays plateau-like features.
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