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Updated: Feb 25, 2026

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
Mechanical Fatigue Behavior of Flexible Printed Organic Thin-Film Transistors under Applied Strain
Tomohito Sekine1, Daisuke Kumaki2, Shizuo Tokito3
1Research Center for Organic Electronics (ROEL), Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510, Japan. tomohito@yz.yamagata-u.ac.jp.
Abstract:
We report on the mechanical fatigue behavior of printed, organic, thin-film transistors (OTFTs) based on a polymer semiconductor, investigated by repeatedly applying strain to the flexible OTFT devices and assessing their electrical characteristics after 60,000 bending cycles. As part of our investigation, we established that the rates of reduction in source/drain currents in the OTFT device depended on bending directions. Our improved understanding of the mechanical fatigue behavior of the flexible printed OTFT devices provides valuable insights into their employment in practical flexible electronics applications.
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