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Updated: Feb 25, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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A Review on Disorder-Driven Metal-Insulator Transition in Crystalline Vacancy-Rich GeSbTe Phase-Change Materials

Jiang-Jing Wang1, Ya-Zhi Xu2, Riccardo Mazzarello3

  • 1Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China. wangjiangjing@stu.xjtu.edu.cn.

Materials (Basel, Switzerland)
|August 5, 2017
PubMed

Keywords:
Anderson insulatordisorderelectron localizationmetal–insulator transitionphase-change materials

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