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Spatial valley separation in strained graphene pn junction.

HongYu Tian1, Jun Wang2

  • 1School of Physics and Electronic Engineering, Linyi University, Linyi 276005, People's Republic of China.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|August 19, 2017
PubMed
Summary

Researchers propose using strained graphene to separate electron valleys, a key step for valleytronics. This method utilizes pseudo-gauge potentials in a pn junction to control electron trajectories for information processing.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Valleytronics, analogous to spintronics, seeks to utilize the electron valley degree of freedom for information processing.
  • Generating valley-polarized electrons is a critical challenge in advancing valleytronics.

Purpose of the Study:

  • To propose and demonstrate a method for spatial separation of electron valleys in graphene.
  • To investigate the use of strain-induced pseudo-gauge potentials for valley manipulation.

Main Methods:

  • Numerical simulation of the electron focusing effect in a strained graphene pn junction using a lattice model.
  • Analysis of how strain-induced pseudo-gauge potentials influence electron trajectories for different valleys (K and K').

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Main Results:

  • Demonstrated spatial separation of valley-unpolarized electrons into distinct K and K' valley beams.
  • Showcased the effective control of valley separation patterns by pseudo-gauge potentials.

Conclusions:

  • Strained graphene pn junctions can efficiently generate valley-polarized electron beams.
  • Pseudo-gauge potentials offer a viable mechanism for valley manipulation in future valleytronic devices.