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Out-of-Plane Piezoelectricity and Ferroelectricity in Layered α-In2Se3 Nanoflakes
1Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University , Beijing 100871, China.
Nano Letters
|August 26, 2017
Summary
Researchers discovered out-of-plane piezoelectricity and ferroelectricity in two-dimensional (2D) indium selenide (In2Se3) nanoflakes. This finding shows potential for advanced nanoelectronic and optoelectronic devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Two-dimensional (2D) materials with piezoelectric and ferroelectric properties are crucial for next-generation nanoelectronics.
- Exploring novel 2D materials is essential to expand the scope of electromechanical and optoelectronic applications.
Purpose of the Study:
- To investigate the piezoelectric and ferroelectric properties of van der Waals layered α-In2Se3 nanoflakes in the 2D limit.
- To demonstrate the potential of α-In2Se3 for applications in nanoelectronics and optoelectronics.
Main Methods:
- Experimental confirmation of noncentrosymmetric R3m symmetry using scanning transmission electron microscopy, second-harmonic generation, and Raman spectroscopy.
- Visualization of ferroelectric domains using piezo-response force microscopy.
- Demonstration of the piezotronic effect in two-terminal devices.
Main Results:
- First experimental evidence of out-of-plane piezoelectricity and ferroelectricity in α-In2Se3 nanoflakes.
- Confirmation of R3m symmetry and visualization of switchable polarization domains.
- Successful demonstration of the piezotronic effect, showing strain-modulated Schottky barriers.
Conclusions:
- Polar α-In2Se3 is a promising 2D material for piezoelectric and ferroelectric applications.
- The material exhibits potential for use in advanced electronic and photonic devices due to its unique properties.
