Selective introduction of Cu impurity into fine-dispersed ZnS obtained during the process of one-stage synthesis
Y Y Bacherikov1, O B Okhrimenko1, A G Zhuk1
1V. Lashkaryov Institute of Semiconductor Physics of the NASU, Pr. Nauky 41, Kyiv, 03028, Ukraine.
Abstract:
Fine ZnS:Cu, obtained by method of self-propagating high-temperature synthesis was investigated. As flux in the mixture NaCl was used, Zn and S were taken in stoichiometric ratio; Cu concentration in charge consisted ~1.5 wt.%. Using SEM data, it was established that obtained ZnS:Cu consists from two fractions-first with particles sizes ~10 μm and more, and other with sizes 50-500 nm. It was established that composition of ZnS:Cu fractions was essentially different. According to EDS data, Cu concentration in particles of fraction with 50-500 nm sizes consists ~2 wt.%, and in particles with sizes ~10 μm and more the presence of Cu was not detected. The reasons that lead to the selective doping of particles in dependence on their size and also the role of NaCl in processes undergoing during synthesis of material are discussed.
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