Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor

Area of Science:

• Materials Science
• Neuroscience
• Electrical Engineering

Background:

• Biologically inspired neuromorphic circuits utilize advanced materials like oxide semiconductors.
• Mobile ions in oxide semiconductors mimic ion movement in biological neurons and synapses.
• Previous studies lacked quantitative modeling for synaptic device relaxation processes.

Purpose of the Study:

• To develop a quantitative model for the voltage dependence of relaxation in artificial synaptic devices.
• To investigate the impact of voltage factors on synaptic behavior.
• To enhance the simulation and control of neuromorphic computing.

Main Methods:

• Utilized gate pulse-stimulated currents in oxide semiconductor devices.
• Mimicked and investigated artificial synapse functions.
• Updated modeling of excitatory post-synaptic current (EPSC) using a stretched-exponential function with voltage factors.

Main Results:

• Developed a quantitative model for the relaxation process of artificial synaptic devices.
• Incorporated voltage factors into the stretched-exponential function for modeling synaptic behavior.
• Demonstrated a more precise way to study synaptic transmission bias impacts.

Conclusions:

• The quantitative model provides a better understanding of voltage-dependent relaxation in artificial synapses.
• This research facilitates improved simulation, realization, and control of neuromorphic computing.
• The findings contribute to the advancement of oxide semiconductor-based neuromorphic devices.