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Impact of RRAM Read Fluctuations on the Program-Verify Approach
David M Nminibapiel1, Dmitry Veksler2, J-H Kim2
1Engineering Physics Division at National Institute Standards and Technology (NIST), Gaithersburg, MD 20899 USA.
IEEE Electron Device Letters : a Publication of the IEEE Electron Devices Society
|September 12, 2017
Summary
Resistive random-access memory (RRAM) faces commercialization hurdles due to unreliable programming. This study reveals that fluctuation-induced false-reading, not resistance relaxation, undermines program-verify methods in RRAM.
Area of Science:
- Materials Science
- Electrical Engineering
- Semiconductor Physics
Background:
- Oxide-based resistive memory (RRAM) exhibits stochastic conductive filament behavior, hindering commercialization.
- Program-verify methodologies are desirable for RRAM but face challenges.
- Previous studies identified resistance state relaxation as the primary issue limiting program-verify effectiveness.
Purpose of the Study:
- To investigate the fundamental reasons behind the failure of program-verify methods in RRAM.
- To differentiate between resistance state relaxation and other factors affecting programming reliability.
- To elucidate the impact of filament fluctuations on RRAM performance.
Main Methods:
- Experimental analysis of resistance state evolution in oxide-based RRAM devices.
- Characterization of SET/RESET programming cycles.
- Investigation of resistance fluctuation phenomena post-programming.
Main Results:
- Resistance state relaxation is not the primary cause of program-verify failure in RRAM.
- Fluctuation-induced false-reading (triggering) significantly disrupts the verify mechanism.
- A large resistance distribution tail is observed immediately after programming due to these fluctuations.
Conclusions:
- The core issue defeating RRAM program-verify methods is fluctuation-induced false-reading.
- This finding has critical implications for the write/erase speed and overall reliability of RRAM.
- Further research should focus on mitigating fluctuation effects for improved RRAM performance.
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