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Tailoring Semiconductor Lateral Multijunctions for Giant Photoconductivity Enhancement
Yutsung Tsai1, Zhaodong Chu1, Yimo Han2
1Department of Physics, Center for Complex Quantum Systems, The University of Texas at Austin, Austin, TX, 78712, USA.
Advanced Materials (Deerfield Beach, Fla.)
|September 12, 2017
Summary
Researchers synthesized a novel WS₂/WS₂Se₂/WS₂ lateral heterostructure. This breakthrough enhances photoconductivity in transition-metal dichalcogenides (TMDs) for advanced optoelectronic devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Semiconductor heterostructures are crucial for novel science and technology.
- Transition-metal dichalcogenides (TMDs) enable new frontiers in atomically thin heterostructures.
- Multijunction design is key for carrier confinement in conventional heterostructures.
Purpose of the Study:
- To synthesize a monolayer WS₂/WS₂Se₂/WS₂ multijunction lateral heterostructure via direct growth.
- To investigate the properties and potential applications of this novel heterostructure.
Main Methods:
- Direct growth via chemical vapor deposition.
- Characterization using Raman spectroscopy, photoluminescence, and annular dark-field scanning transmission electron microscopy.
- Measurement of local photoconductivity using microwave impedance microscopy and finite element analysis.
Main Results:
- Successful synthesis of a monolayer WS₂/WS₂Se₂/WS₂ multijunction lateral heterostructure.
- Demonstrated tailored and enhanced local photoconductivity in the alloy region by two orders of magnitude over pure WS₂.
- Confirmed carrier diffusion and confinement into the alloy region via finite element analysis.
Conclusions:
- Atomically thin lateral heterostructures offer significant technological potential for optoelectronics.
- The synthesized WS₂/WS₂Se₂/WS₂ heterostructure exhibits enhanced optoelectronic properties.
- This work paves the way for advanced applications of TMD-based lateral heterostructures.
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