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Related Concept Videos

Determination of Crystal Structures01:29

Determination of Crystal Structures

In the late 1800s, the revelation that light extended beyond visible wavelengths led to the discovery of X-rays by Wilhelm Roentgen. Recognized as high-energy electromagnetic radiation with short wavelengths, X-rays prompted exploration into their interaction with crystals. Max von Laue proposed in 1912 that the periodic arrangement of atoms, ions, or molecules in crystals would cause them to diffract X-rays, a hypothesis confirmed through experiments with copper sulfate and zinc sulfide...

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High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy
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Crystal Phase Quantum Well Emission with Digital Control.

S Assali1, J Lähnemann2, T T T Vu1

  • 1Department of Applied Physics, Eindhoven University of Technology , 5600 MB, Eindhoven, The Netherlands.

Nano Letters
|September 12, 2017
PubMed
Summary
This summary is machine-generated.

Researchers digitally tuned the visible light emission from gallium phosphide (GaP) crystal phase quantum wells (CPQWs) in nanowires by precisely controlling the thickness of zinc-blende barriers. This breakthrough enables digitally tunable discrete emission energies for advanced quantum systems.

Keywords:
Semiconductor nanowirecrystal phase quantum wellgallium phosphidephotoluminescencespontaneous polarization

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Area of Science:

  • Semiconductor Nanostructures
  • Quantum Engineering
  • Materials Science

Background:

  • Achieving atomically sharp interfaces in quantum well and quantum dot heterostructures remains a significant challenge.
  • Nanowires offer a unique platform for band structure engineering through controlled crystal phase switching between zinc-blende (ZB) and wurtzite (WZ) phases.
  • Crystal phase switching in nanowires creates crystal phase quantum wells (CPQWs) and dots (CPQDs).

Purpose of the Study:

  • To demonstrate the digital tuning of visible emission in WZ/ZB/WZ CPQWs within GaP nanowires.
  • To investigate the effect of barrier thickness on the optical properties of CPQWs.
  • To explore the potential of these structures for applications in quantum information processing.

Main Methods:

  • Fabrication of GaP nanowires with controlled WZ/ZB/WZ heterostructures.
  • Utilizing crystal phase switching to form quantum wells.
  • Characterizing the optical emission properties by varying the thickness of the ZB barrier layer.

Main Results:

  • Demonstrated digital tuning of visible emission by precisely controlling the ZB barrier thickness in GaP CPQWs.
  • Observed uniform energy spacing between sharp emission lines, directly correlated with the addition of single ZB monolayers.
  • Identified inherent electric fields at WZ/ZB junctions causing charge carrier confinement and novel transition mechanisms.

Conclusions:

  • Controlled growth of identical quantum wells with atomically flat interfaces is achievable.
  • Digitally tunable discrete emission energies can be realized in GaP CPQWs.
  • This approach offers a promising new route for advancing entangled photon generation in solid-state quantum systems.