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Determination of Crystal Structures

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In the late 1800s, the revelation that light extended beyond visible wavelengths led to the discovery of X-rays by Wilhelm Roentgen. Recognized as high-energy electromagnetic radiation with short wavelengths, X-rays prompted exploration into their interaction with crystals. Max von Laue proposed in 1912 that the periodic arrangement of atoms, ions, or molecules in crystals would cause them to diffract X-rays, a hypothesis confirmed through experiments with copper sulfate and zinc sulfide...

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High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy

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Crystal Phase Quantum Well Emission with Digital Control.

S Assali¹, J Lähnemann², T T T Vu¹

¹Department of Applied Physics, Eindhoven University of Technology , 5600 MB, Eindhoven, The Netherlands.

|September 12, 2017

Summary

This summary is machine-generated.

Researchers digitally tuned the visible light emission from gallium phosphide (GaP) crystal phase quantum wells (CPQWs) in nanowires by precisely controlling the thickness of zinc-blende barriers. This breakthrough enables digitally tunable discrete emission energies for advanced quantum systems.

Keywords:

Semiconductor nanowire crystal phase quantum well gallium phosphide photoluminescence spontaneous polarization

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Area of Science:

Semiconductor Nanostructures
Quantum Engineering
Materials Science

Background:

Achieving atomically sharp interfaces in quantum well and quantum dot heterostructures remains a significant challenge.
Nanowires offer a unique platform for band structure engineering through controlled crystal phase switching between zinc-blende (ZB) and wurtzite (WZ) phases.
Crystal phase switching in nanowires creates crystal phase quantum wells (CPQWs) and dots (CPQDs).

Purpose of the Study:

To demonstrate the digital tuning of visible emission in WZ/ZB/WZ CPQWs within GaP nanowires.
To investigate the effect of barrier thickness on the optical properties of CPQWs.
To explore the potential of these structures for applications in quantum information processing.

Main Methods:

Fabrication of GaP nanowires with controlled WZ/ZB/WZ heterostructures.
Utilizing crystal phase switching to form quantum wells.
Characterizing the optical emission properties by varying the thickness of the ZB barrier layer.

Main Results:

Demonstrated digital tuning of visible emission by precisely controlling the ZB barrier thickness in GaP CPQWs.
Observed uniform energy spacing between sharp emission lines, directly correlated with the addition of single ZB monolayers.
Identified inherent electric fields at WZ/ZB junctions causing charge carrier confinement and novel transition mechanisms.

Conclusions:

Controlled growth of identical quantum wells with atomically flat interfaces is achievable.
Digitally tunable discrete emission energies can be realized in GaP CPQWs.
This approach offers a promising new route for advancing entangled photon generation in solid-state quantum systems.