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Updated: Feb 22, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Observation of topological states residing at step edges of WTe2
Lang Peng1, Yuan Yuan1, Gang Li2,3
1School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, China.
Abstract:
Topological states emerge at the boundary of solids as a consequence of the nontrivial topology of the bulk. Recently, theory predicts a topological edge state on single layer transition metal dichalcogenides with 1T' structure. However, its existence still lacks experimental proof. Here, we report the direct observations of the topological states at the step edge of WTe2 by spectroscopic-imaging scanning tunneling microscopy. A one-dimensional electronic state residing at the step edge of WTe2 is observed, which exhibits remarkable robustness against edge imperfections. First principles calculations rigorously verify the edge state has a topological origin, and its topological nature is unaffected by the presence of the substrate. Our study supports the existence of topological edge states in 1T'-WTe2, which may envision in-depth study of its topological physics and device applications.Two-dimensional topological insulators support edge conduction electrons but its realization in real materials is rare. Here, Peng et al. report the direct observation of topological states at the step edge of WTe2.
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