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Room-Temperature Spin-Orbit Torque Switching Induced by a Topological Insulator
Jiahao Han1, A Richardella2, Saima A Siddiqui1
1Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
Physical Review Letters
|September 27, 2017
Summary
Topological insulators enable efficient magnetic switching at room temperature. This study demonstrates robust charge-spin conversion in topological insulators (TI), paving the way for practical spintronic devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Spintronics
Background:
- Topological insulators (TI) possess unique spin-momentum coupled electronic states beneficial for magnetic switching.
- Existing research faces challenges with charge-spin conversion efficiency and requires cryogenic temperatures for TI-based magnetic switching.
Purpose of the Study:
- To investigate spin-orbit torque switching in a topological insulator-ferrimagnet heterostructure at room temperature.
- To evaluate the charge-spin conversion efficiency of topological insulators compared to conventional heavy metals.
Main Methods:
- Fabrication of a heterostructure comprising a topological insulator and a ferrimagnet with perpendicular magnetic anisotropy.
- Characterization of spin-orbit torque-driven magnetic switching phenomena at room temperature.
Main Results:
- Demonstrated successful spin-orbit torque switching in the TI-ferrimagnet heterostructure at room temperature.
- Observed a significantly larger effective spin Hall angle in the topological insulator compared to heavy metals.
- Confirmed robust charge-spin conversion capabilities of topological insulators.
Conclusions:
- Topological insulators offer a promising platform for efficient room-temperature spintronic devices.
- The enhanced spin Hall angle in TIs surpasses that of heavy metals, indicating superior performance.
- This work provides a direct pathway for the development of applicable TI-based spintronic applications.
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