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Giant positive magnetoresistance in half-metallic double-perovskite Sr2CrWO6 thin films
Ji Zhang1, Wei-Jing Ji1, Jie Xu1
1National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Science and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
Abstract:
Magnetoresistance (MR) is the magnetic field-induced change of electrical resistance. The MR effect not only has wide applications in hard drivers and sensors but also is a long-standing scientific issue for complex interactions. Ferromagnetic/ferrimagnetic oxides generally show negative MR due to the magnetic field-induced spin order. We report the unusually giant positive MR up to 17,200% (at 2 K and 7 T) in 12-nm Sr2CrWO6 thin films, which show metallic behavior with high carrier density of up to 2.26 × 1028 m-3 and high mobility of 5.66 × 104 cm2 V-1 s-1. The possible mechanism is that the external magnetic field suppresses the long-range antiferromagnetic order to form short-range antiferromagnetic fluctuations, which enhance electronic scattering and lead to the giant positive MR. The high mobility may also have contributions to the positive MR. These results not only experimentally confirm that the giant positive MR can be realized in oxides but also open up new opportunities for developing and understanding the giant positive MR in oxides.
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