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Infrared Energy Harvesting in Millimeter-Scale GaAs Photovoltaics

Eunseong Moon¹, David Blaauw¹, Jamie D Phillips¹

¹Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109 USA.

IEEE Transactions on Electron Devices

|November 14, 2017

Abstract:

The design and characterization of mm-scale GaAs photovoltaic cells are presented and demonstrate highly efficient energy harvesting in the near infrared. Device performance is improved dramatically by optimization of the device structure for the near-infrared spectral region and improving surface and sidewall passivation with ammonium sulfide treatment and subsequent silicon nitride deposition. The power conversion efficiency of a 6.4 mm² cell under 660 nW/mm² NIR illumination at 850 nm is greater than 30 %, which is higher than commercial crystalline silicon solar cells under similar illumination conditions. Critical performance limiting factors of sub-mm scale GaAs photovoltaic cells are addressed and compared to theoretical calculations.

Keywords:

gallium arsenide photovoltaics silicon wireless energy harvesting

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