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Modeling of Conduction Mechanism in Filament-free Multi-layer Bulk RRAM.

Yucheng Zhou1, Ashwani Kumar1, Jaeseoung Park1

  • 1Department of Electrical and Computer Engineering, University of California at San Diego, San Diego, CA 92093 USA.

IEEE Transactions on Electron Devices
|October 8, 2025
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Summary

Filament-free bulk resistive-switching random access memory (RRAM) offers improved multi-level states for neuromorphic computing. This study models the conduction mechanism in bulk RRAM, guiding the design of future devices.

Keywords:
Neuromorphic computingTiOxbulk RRAMcompute in memoryconduction mechanismfilament-free switching

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Computer Science

Background:

  • Filament-free bulk resistive-switching random access memory (RRAM) shows promise for neuromorphic computing due to multi-level conductance states and forming-free operation.
  • Optimizing RRAM device characteristics and understanding switching dynamics are critical for large-scale integration in compute-in-memory and neuromorphic applications.

Purpose of the Study:

  • To investigate the conduction mechanism and switching dynamics in filament-free bulk RRAM devices.
  • To develop a quantitative physical model for conduction in trilayer stacks.
  • To guide the design of bulk switching RRAM devices using multilayer metal oxide stacks.

Main Methods:

  • Temperature-dependent current-voltage (I-V) measurements were performed to analyze switching characteristics.
  • A quantitative physical model was developed to describe conduction across a trilayer stack, considering series combinations of multiple conduction mechanisms.
  • The model was fitted to experimental data from filament-free bulk RRAM devices.

Main Results:

  • The study successfully analyzed the switching characteristics of bulk RRAM through temperature-dependent I-V measurements.
  • A quantitative physical model was presented, describing conduction across trilayer stacks by combining multiple mechanisms.
  • The model was validated by fitting it to experimental data, revealing the origin of bulk switching in trilayer stacks.

Conclusions:

  • The developed quantitative physical model accurately describes the conduction mechanism in filament-free bulk RRAM devices.
  • This model serves as a valuable guide for designing novel bulk switching RRAM devices utilizing multilayer metal oxide stacks.
  • The findings contribute to the advancement of RRAM technology for neuromorphic computing and memory applications.