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Gate-tunable strong-weak localization transition in few-layer black phosphorus.

Gen Long1, Shuigang Xu1, Xiangbin Cai1

  • 1Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Hong Kong, People's Republic of China.

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Atomically-thin black phosphorus transistors exhibit a tunable strong-weak localization transition. This transition, influenced by gate voltage, reveals insights into electron scattering and transport in few-layer black phosphorus devices.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Atomically-thin black phosphorus (BP) is a promising material for next-generation electronics.
  • Understanding electron transport phenomena in few-layer BP is crucial for device applications.

Purpose of the Study:

  • To investigate the strong-weak localization transition in black phosphorus field-effect transistors.
  • To analyze the gate-tunable transport properties and underlying scattering mechanisms.

Main Methods:

  • Fabrication and characterization of few-layer black phosphorus field-effect transistors.
  • Electrical transport measurements under varying gate voltages and temperatures.
  • Application of variable-range hopping models and analysis of magnetoresistance.

Main Results:

  • Observed a gate-tunable strong-weak localization transition in BP transistors.
  • Identified hopping transport in the low carrier density regime and weak localization in the high carrier density regime.
  • Determined a power-law temperature dependence for phase coherence length, indicating inelastic electron-electron interactions.

Conclusions:

  • The study elucidates the interplay between localization and phase coherence in few-layer BP.
  • Gate voltage provides effective control over the transition between strong and weak localization.
  • Few-layer BP exhibits distinct 2D transport characteristics with potential for advanced electronic devices.